TCAD News, September 2008
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چکیده
As new materials and novel device designs are needed to further CMOS and memorydevice scaling, a range of advanced physical models has been added to TCAD Sentaurus Version A-2008.09 to allow users to explore these technology options. While high-k dielectrics and metal gate stacks are more widely adopted, further optimization is necessary to ensure its production worthiness and high yield. It is also true for stress, substrate, and junction engineering, which require experimental splits to determine the best conditions to maximize performance.
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تاریخ انتشار 2008